C1N4156
CN4157
CN5179
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
SILICON
FORWARD REFERENCE DIODES
The CENTRAL SEMICONDUCTOR C1N4156, CN41567, and
CN5179 are multi-chip silicon diodes designed for applications
requiring controlled forward voltage characteristics such as
voltage regulation, sensing, and comparing.
MARKING: FULL PART NUMBER
DO-35 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
Power Dissipation
Operating and Storage Junction Temperature
UNITS
PD
400
mW
TJ, Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
C1N4156
CN4157
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
IR
VR=20V
10
10
VF
IF=1.0mA
1.21 1.41
1.85 2.05
VF
VF
CN5179
MIN MAX
10
UNITS
μA
2.20
2.80
V
IF=10mA
1.38
1.58
2.12
2.32
2.60
3.20
V
IF=100mA
1.54
1.84
2.36
2.66
3.00
3.70
V
R2 (20-January 2016)
C1N4156
CN4157
CN5179
SILICON
FORWARD REFERENCE DIODES
DO-35 CASE - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
R2 (20-January 2016)
w w w. c e n t r a l s e m i . c o m
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